A Single?Step?Grown Semiconducting vdW Heterostructure of Tungsten Oxide–Sulfide for High?Performance Photodetection

Ultrathin semiconducting van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) play a critical role in developing next-generation electronic and optoelectronic devices. The replacement of one component the heterostructure by oxides (TMOs) certainly brings numerous benefits including long-term stability novel functionalities. However, single-step chemical-vapor deposition growth TMOs/TMDs vdW heterostructures, as highly desired approach for large-scale fabrication practical implementation, is challenging due to contradictory atmospheres TMOs TMDs. Here, an ultrathin WO3–x/WS2 quantity-driven discrepant interaction between S precursor, which induces sulfidation produce WS2 S-rich phase changed reduction obtain sub-stoichiometric WO3–x S-deficient realized. Both exhibit properties with favorable type-II band alignment. A wide response across entire visible spectrum large photo-responsivity 4375 W?1, detectivity 5.47 × 1011 Jones, sub-ms switching kinetics at 405 nm achieved without gating bias, significantly improved over other reported heterostructures. This study demonstrates possibility single-step-growing their strong potential high-performance